Apparatus and method for UV treatment, chemical treatment, and deposition

ABSTRACT

Embodiments of the present invention provide apparatus and methods for performing UV treatment and chemical treatment and/or deposition in the same chamber. One embodiment of the present invention provides a processing chamber including a UV transparent gas distribution showerhead disposed above a substrate support located in an inner volume of the processing chamber, a UV transparent window disposed above the UV transparent gas distribution showerhead, and a UV unit disposed outside the inner volume. The UV unit is configured to direct UV lights towards the substrate support through the UV transparent window and the UV transparent gas distribution showerhead.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a divisional of U.S. patent application Ser. No.13/440,720 filed on Apr. 5, 2012, which claims benefit of U.S.Provisional Patent Application Ser. No. 61/473,577 filed Apr. 8, 2011,which are both herein incorporated by reference.

BACKGROUND Field

Embodiment of the present invention generally relates to a method andapparatus for fabricating devices on a semiconductor substrate. Moreparticularly, embodiments of the present invention provide apparatus andmethods for performing UV treatment and chemical treatment and/ordeposition in the same chamber.

Description of the Related Art

As the size of the electronic devices is reduced, new materials with alow dielectric constant (k), such as materials with dielectric value aslow as 2.2, are used in forming the electronic devices.

Plasma-deposited porous low k films are one class of materials that isable to satisfy such a requirement. The presence of pores and carbon,which contributes to low dielectric value, creates significant processintegration challenges since the pores are susceptible to etching,ashing, and plasma damages. Therefore, a k-restoration process isusually needed to restore the porous low-k films after formation and/orafter integration.

Traditionally, two different chambers are needed for k-restoration. Onechamber for chemical treatment of the low-k films, such as silylation,or deposition of a thin film for surface treatment of the low-k films. Adifferent chamber is used for pore sealing using UV (ultra violet)curing. Traditional k-restoration is performed in separate chambersbecause the chemical surface treatment uses a showerhead to supply aprocessing gas including halogen or ozone while the UV chamber uses aquartz window which usually is not compatible with halogen and ozone.However, the two chamber k-restoration process increases cost ofownership by requiring two chambers and additional time for substratetransfer.

Therefore, there is a need for an improved apparatus and method fork-restoration processes.

SUMMARY

Embodiments of the present invention generally provide apparatus andmethods for processing a substrate. Particularly, embodiments of thepresent inventions provide a processing chamber that is capable ofperforming UV treatment as well as chemical or surface treatment.

One embodiment of the present invention provides a processing chamber.The processing chamber comprises a chamber body defining an innervolume, a substrate support disposed in the inner volume, and a UVtransparent gas distribution showerhead disposed above the substratesupport. The processing chamber further comprises a UV transparentwindow disposed above the UV transparent gas distribution showerhead. Agas volume is formed between the UV transparent gas distributionshowerhead and the UV transparent window. The gas volume and the innervolume are in fluid communication through a plurality of through holesformed through the UV transparent gas distribution showerhead. Theprocessing chamber further comprises a UV unit disposed outside theinner volume. The UV unit is configured to direct UV lights towards thesubstrate support through the UV transparent window and the UVtransparent gas distribution showerhead.

Another embodiment of the present invention provides a processingsystem. The processing system comprises a transfer chamber defining atransfer volume, a substrate transfer robot disposed in the transfervolume, and processing chamber coupled to the transfer chamber. Theprocessing chamber comprises a chamber body defining an inner volume, asubstrate support disposed in the inner volume, and a UV transparent gasdistribution showerhead disposed above the substrate support. Theprocessing chamber further comprises a UV transparent window disposedabove the UV transparent gas distribution showerhead. A gas volume isformed between the UV transparent gas distribution showerhead and the UVtransparent window. The gas volume and the inner volume are in fluidcommunication through a plurality of through holes formed through the UVtransparent gas distribution showerhead. The processing chamber furthercomprises a UV unit disposed outside the UV transparent window. The UVunit is configured to direct UV lights towards the substrate supportthrough the UV transparent window and the UV transparent gasdistribution showerhead.

Yet another embodiment of the present invention provides a method forprocessing a substrate. The method comprises receiving a substrate on asubstrate support disposed in a processing chamber. The processingchamber comprises a UV transparent gas distribution showerhead disposedabove the substrate support, a UV transparent window disposed above theUV transparent gas distribution showerhead, and a UV unit disposedoutside the UV transparent window. The UV unit is configured to directUV lights towards the substrate support through the UV transparentwindow and the UV transparent gas distribution showerhead. The methodfurther comprises chemically treating the substrate by flowing one ormore processing gas through the UV transparent gas distributionshowerhead from a gas volume defined between the UV transparent windowand the UV transparent gas distribution showerhead, and curing thesubstrate by directing a UV energy towards the substrate from the UVunit through the UV transparent gas distribution showerhead and the UVtransparent window.

BRIEF DESCRIPTION OF THE DRAWINGS

So that the manner in which the above recited features of the presentinvention can be understood in detail, a more particular description ofthe invention, briefly summarized above, may be had by reference toembodiments, some of which are illustrated in the appended drawings. Itis to be noted, however, that the appended drawings illustrate onlytypical embodiments of this invention and are therefore not to beconsidered limiting of its scope, for the invention may admit to otherequally effective embodiments.

FIG. 1 is a schematic sectional view of a processing chamber accordingto one embodiment of the present invention.

FIG. 2 is a schematic top view of the processing chamber of FIG. 1 witha UV unit and a window removed.

FIG. 3A is a schematic partial perspective view of a clamping membershowing gas channel according to one embodiment of the presentinvention.

FIG. 3B is a schematic partial section view of the clamping member ofFIG. 3A.

FIG. 4 is a partial sectional view of a showerhead clamping assemblyincluding a plenum for gas flow.

FIG. 5A is a partial sectional view of a UV transparent showerheadaccording to one embodiment of the present invention.

FIG. 5B is a partial sectional view of a UV transparent window accordingto one embodiment of the present invention.

FIG. 6 is a sectional view of a twin volume processing chamber accordingto one embodiment of the present invention.

FIG. 7 is a top view of the twin volume processing chambers of FIG. 6.

FIG. 8 is a schematic plan view of a processing system according to oneembodiment of the present invention.

FIG. 9 is a diagram showing a method for processing a substrateaccording to one embodiment of the present invention.

To facilitate understanding, identical reference numerals have beenused, where possible, to designate identical elements that are common tothe figures. It is contemplated that elements disclosed in oneembodiment may be beneficially utilized on other embodiments withoutspecific recitation.

DETAILED DESCRIPTION

Embodiment of the present invention generally relates to apparatus andfor processing a substrate. More particularly, embodiments of thepresent invention provide apparatus and methods for performing UVtreatment and chemical treatment and/or deposition in the same chamber.

FIG. 1 is a schematic sectional view of a processing chamber 100according to one embodiment of the present invention. The processingchamber 100 is configured to process a substrate using UV energy, one ormore processing gases, and remotely generated plasma.

The processing chamber 100 includes a chamber body 102 and a chamber lid104 disposed over the chamber body. The chamber body 102 and the chamberlid 104 form an inner volume 106. A substrate support assembly 108 isdisposed in the inner volume 106. The substrate support assembly 108receives and supports a substrate 110 thereon for processing.

A UV transparent gas distribution showerhead 116 is hung in the innervolume 106 through a central opening 112 of the chamber 104 by an upperclamping member 118 and a lower clamping member 120. The UV transparentgas distribution showerhead 116 is positioned facing the substratesupport assembly 108 to distribute one or more processing gases across aprocessing volume 122 which is below the UV transparent gas distributionshowerhead 116 and above the substrate support assembly 108.

A UV transparent window 114 is disposed above the UV transparent gasdistribution showerhead 116. In one embodiment, the UV transparentwindow 114 is supported by the upper clamping member 118 and secured bya window clamping member 124. The window UV transparent 114 ispositioned at a distance 126 above the UV transparent gas distributionshowerhead 116 forming a gas volume 128 between the UV transparentwindow 114 and the UV transparent gas distribution showerhead 116.

The UV transparent window 114 and the UV transparent gas distributionshowerhead 116 are at least partially transparent to thermal energywithin the UV wavelengths.

A UV source 130 is disposed above the UV transparent window 114. The UVsource 130 is configured to generate UV energy and project the UV energytowards the processing volume 122 through the UV transparent window 114and the UV transparent gas distribution showerhead 116. A cover 132 maybe disposed above the UV source 130. In one embodiment, the innersurface 134 of the cover 132 may be shaped to assist projection of theUV energy from the UV source 130 towards the processing volume 122.

In one embodiment, the UV source 130 includes one or more UV lights 136to generate UV radiation. More detailed descriptions of suitable UVsources can be found in U.S. Pat. No. 7,777,198, and United StatesPatent Publication 2006/0249175.

The processing chamber 100 includes flow channels configured to supplyone or more processing gases across the substrate 110 disposed over thesubstrate support assembly 108.

In one embodiment, one or more processing gases are delivered to theprocessing volume 122 through flow channels formed in the upper clampingmember 118 and the UV transparent gas distribution showerhead 116.

The processing chamber 100 includes a gas panel 140 configured togenerate and/or mix processing gases from one or more liquid sources 138a, 138 b, 138 c. The gas panel 140 is coupled to an input manifold 144via one or more gas lines 142 a, 142 b, 142 c. In one embodiment, theone or more gas lines 142 a, 142 b, 142 c are heated to prevent anycondensation of the processing gas therein during transfer. In oneembodiment, the gas panel 140 is configured to provide one or moreprocessing gases for chemical treatments of the substrate 110 disposedin the processing volume 122.

The processing chamber 100 also include a remote plasma source 154connected to the input manifold 144 via a plasma channel 156. In oneembodiment, the remote plasma source 154 may be used to supply plasmafor cleaning inner surfaces of the processing chamber 100.

The input manifold 144 has internal channels 146 connecting one or morefeedthroughs 148 to an outlet 150. In one embodiment, each gas line 142a, 142 b, 142 c and the plasma channel 156 is coupled to one of thefeedthroughs 148. The input manifold 144 may be disposed over thechamber lid 104 and coupled to the upper clamping member 118 so that theoutlet 150 connects to a feeding slot 152 formed in the upper clampingmember 118. The input manifold 144 may be machined from a suitablematerial, such as metals. In one embodiment, the input manifold 144 ismachined from aluminum.

In one embodiment, flow channels are formed in the upper clamping member118 so that the processing gas from the input manifold 144 enters thegas volume 128 above the UV transparent gas distribution showerhead 116in a substantially even manner. The processing gas can then flow throughthe UV transparent gas distribution showerhead 116 to the processingvolume 122.

In one embodiment, the flow channels in the upper clamping member 118include an inlet plenum 160, a vertical slot 158 connecting the inletplenum 160 to the feeding slot 152, and a plurality of spoke apertures162 connecting the inlet plenum 160 to the gas volume 128. In oneembodiment, the plurality of spoke apertures 162 are evenly distributedalong the inlet plenum 160 to achieve even gas distribution within thegas volume 128. In one embodiment, the inlet plenum 160 is formed by agroove 176 of the upper clamping member 118 and a groove 178 of thelower clamping member 120. By combining volumes from the grooves 176 and178, the volume of the inlet plenum 160 is increased without changingdimensions of the upper clamping member 118 and lower clamping member120. By increasing the volume of the inlet plenum 160, embodiments ofthe present invention reduce the pressure drop of the incoming gas flow.

The UV transparent gas distribution showerhead 116 includes a pluralityof through holes 164 that allow processing gas to flow from the gasvolume 128 to the processing volume 122. In one embodiment, theplurality of through holes 164 are evenly distributed across the UVtransparent gas distribution showerhead 116.

The processing chamber 100 also includes an inner liner 166 and an outerliner 168 disposed in the inner volume 106 around the substrate supportassembly 108. The inner liner 166 and the outer liner 168 shield thechamber body 102 from processing chemistry in the inner volume 106. Theinner liner 166 and outer liner 168 also form an exhaust path for theprocessing chamber 100. In one embodiment, an exhaust plenum 170 isformed between the inner liner 166 and the outer liner 168. The exhaustplenum 170 radially surrounds the processing volume 122. A plurality ofapertures 172 are formed through the inner liner 166 connecting theexhaust plenum 170 and the processing volume 122. A vacuum pump 174 isin fluid communication with the exhaust plenum 170 so that theprocessing volume 122 can be pumped out through the plurality apertures172 and the exhaust plenum 170.

FIG. 2 is a schematic top view of the processing chamber 100 with the UVsource 130 and the UV transparent window 114 removed. The arrowsillustrate the flow path from the input manifold 144 to the gas volume128.

FIG. 3A is a schematic partial perspective view of the upper clampingmember 118 showing gas channels in dotted lines. FIG. 3B is a schematicpartial perspective view of the upper clamping member 118 from adifferent angle. The upper clamping member 118 includes a ring shapedbody 304, a flange 302 extending radially outward from an upper portion304 u of the ring shaped body 304, and a lower step 306 extendingradially inward from a lower portion 304L of the ring shaped body 304.The flange 302 allows the upper clamping member 118 to mount on achamber body with a circular top opening. The step 306 has a top surface308 for supporting a window therein.

The feeding slot 152 is formed in the flange 302 and opens to an outersurface 312 of the flange 302. The groove 176 is formed from a bottomsurface 310 of the step 306. The vertical slot 158 connects the feedingslot 152 to the groove 176. The plurality of spoke apertures 162 areformed in the step 306 between an inner surface 314 of the step 306 andan inner wall 316 of the groove 176. During processing, the processinggas enters the feed slot 152, passes through the vertical slot 158,expands in the groove 176, and then flows through the plurality of spokeapertures 162. In one embodiment, the feeding slot 152 and the verticalslot 158 are elongated in the direction perpendicular to the flow toincrease the size of the flow channel within the upper clamping member118. By increasing the size of the feeding slot 152 and the verticalslot 158, pressure drop in the gas flow can be reduced.

In one embodiment, two or more columns 318 may be formed in the groove176. The columns 318 are used to attach the lower clamping member 120.

FIG. 4 is a schematic partial sectional view of showing that the lowerclamping member 120 is attached to the upper clamping member 118 at thecolumn 318 by one or more screws 402. FIG. 4 also illustrates that theinlet plenum 160 are formed by matching grooves 176, 178 of the upperclamping member 118 and lower clamping member 120. By including volumesfrom both the upper and lower clamping members 118, 120, volume of theinlet plenum 160 is increased without changing other dimensions of thechamber components. The increased volume of the inlet plenum 160 furtherreduces pressure drop in the flow path during processing.

As discussed above, the processing chamber 100 is capable of performingboth chemical or surface treatment and UV treatment. For example, in theembodiment shown in FIG. 1, a UV treatment to the substrate 110 disposedon the processing volume 122 can be performed by delivering UV energyfrom the UV source 130 through the UV transparent window 114 and the UVtransparent gas distribution showerhead 116.

A chemical treatment to the substrate 110 disposed in the processingvolume 122 can be performed by supplying one or more processing gasesfrom the gas panel 140 to the processing volume 122 through a flow pathincluding the UV transparent gas distribution showerhead 116. In theembodiment shown in FIG. 1, the flow path include the plasma channel156, the internal channels 146 in the input manifold 144, the feedingslot 152, the vertical slot 158, the inlet plenum 160, the plurality ofspoke apertures 162, the gas volume 128, and the plurality of throughholes 164 in the UV transparent gas distribution showerhead 116. The UVtransparent gas distribution showerhead 116 and the UV transparentwindow 114 are not only substantially transparent to lights within theUV wavelength but also resistive to the chemistry in the processing gas.

FIG. 5A is a partial sectional view of a UV transparent gas distributionshowerhead 500 according to one embodiment of the present invention. TheUV transparent gas distribution showerhead 500 is substantiallytransparent to lights within the UV wavelength and resistive againstprocessing chemistry including halogen, such as fluorine, or ozone. TheUV transparent gas distribution showerhead 500 may be used in place ofthe UV transparent gas distribution showerhead 116 in the processingchamber 100.

The UV transparent gas distribution showerhead 500 includes a body 502.The body 502 may shape substantially like a disk having an upper surface508 and a lower surface 510 substantially parallel to each other. Aplurality of through holes 506 are formed through the body 502. Thethrough holes 506 open to the upper surface 508 and the lower surface510 and are configured to allow a processing gas evenly distributedthrough the body 502. The body 502 is formed from a material that issubstantially transparent to lights within the UV wavelength. In oneembodiment, the body 502 is formed from quartz.

The UV transparent gas distribution showerhead 500 also includes acoating 504 covering the upper surface 508, the lower surface 510, andinner surface 512 forming the plurality of through holes 506. Thecoating 504 protects the body 502 from being damaged by processing gaspassing through the through holes 506 without blocking the UVwavelengths. In one embodiment, the coating 504 is resistant againstprocessing chemistry including halogen, such as fluorine, or ozone. Thecoating 504 may comprise aluminum oxynitride, sapphire, or othersuitable materials. The coating 504 may be deposited on the body 502using common deposition technologies, such as chemical vapor deposition,physical vapor deposition, spraying coating. The thickness of thecoating 504 may be selected to be thick enough to provide protection tothe body 502 without affecting UV transparency of the body 502. In oneembodiment, the coating 504 is an aluminum oxynitride film of athickness up to about 500 micro meters formed by chemical vapordeposition or physical vapor deposition.

FIG. 5B is a partial sectional view of a UV transparent window 520according to one embodiment of the present invention. Similar to the UVtransparent gas distribution showerhead 500, the UV transparent window520 is also substantially transparent to lights within the UV wavelengthand resistive against processing chemistry including halogen, such asfluorine, or ozone. The UV transparent gas distribution showerhead 500may be used in place of the UV transparent gas distribution showerhead116 in the processing chamber 100.

The UV transparent window 520 includes a body 522 formed from a UVtransparent material and a coating 524 formed at least on a lowersurface 526 of the body 522. The body 522 may be formed from any UVtransparent material. In one embodiment, the body 522 is formed fromquartz. The coating 524 protects the body 522 from being damaged whenexposed to a processing gas. In one embodiment, the coating 524 isresistant against processing chemistry including halogen, such asfluorine, or ozone. The coating 524 include aluminum oxynitride,sapphire, or other suitable materials. The coating 524 may be depositedon the body 522 using common deposition technologies, such as chemicalvapor deposition, physical vapor deposition, spraying coating. Thethickness of the coating 524 may be selected to be thick enough toprovide protection to the body 522 without affecting UV transparency ofthe body 522. In one embodiment, the coating 524 is an aluminumoxynitride film of a thickness up to about 500 micro meters formed bychemical vapor deposition or physical vapor deposition.

FIG. 6 is a sectional view of a twin volume processing chamber 600according to one embodiment of the present invention. FIG. 7 is a topview of the twin volume processing chamber 600. The twin volumeprocessing chamber 600 includes two processing chambers 600 a, 600 bthat are substantially similar to the processing chamber 100 of FIG. 1.

The processing chambers 600 a, 600 b share a chamber body 602 and achamber lid 604. The processing chambers 600 a, 600 b are mirror imagesof one another about a central plane 628.

The processing chamber 600 a defines a processing volume 624 forprocessing a single substrate. The processing chamber 600 a includes aUV transparent window 616 and a UV transparent gas distributionshowerhead 620 disposed above the processing volume 624. The processingchamber 600 b defines a processing volume 626 for processing a singlesubstrate. The processing chamber 600 b includes a UV transparent window618 and a UV transparent gas distribution showerhead 622 disposed abovethe processing volume 626.

The processing chambers 600 a, 600 b share a remote plasma source 606, agas panel 608, and a vacuum pump 610. The processing chamber 600 a iscoupled to the remote plasma source 606 and the gas panel 608 via aninput manifold 612 and the processing chamber 600 b is coupled to theremote plasma source 606 and the gas panel 608 via an input manifold614. The input manifolds 612, 614 may be positioned so that thedistances between the input manifolds 612, 614 to the remote plasmasource 606 are minimized to reduce radicals in the plasma fromrecombination while flowing to the processing volumes 624, 626. In oneembodiment, the input manifolds 612, 614 are positioned at locationsthat are at an angle α from a horizontal line 630. In one embodiment,the angle α is about 45 degrees.

FIG. 8 is a schematic plan view of a processing system 800 according toone embodiment of the present invention. The processing system 800includes one or more twin volume processing chambers 600.

The processing system 800 includes a vacuum-tight processing platform804, a factory interface 812, and a system controller 810. The platform804 includes a plurality of twin volume processing chambers 822, 824,826 and a load-lock chamber 816 that are coupled to a transfer chamber802. In one embodiment, the transfer chamber 802 may have four sides806. Each side 806 is configured to connect with a twin volumeprocessing chamber 600 or load-lock chamber 816. Three twin volumeprocessing chambers 822, 824, 826 are coupled to three sides 806 of thetransfer chamber 802 as shown in FIG. 8.

The factory interface 812 is coupled to the transfer chamber 802 throughthe dual load-lock chamber 816. In one embodiment, the factory interface812 includes at least one docking station 814 and at least one factoryinterface robot 820 to facilitate transfer of substrates. The dockingstation 814 is configured to accept one or more front opening unifiedpod (FOUP) 818.

Each of the twin volume processing chambers 822, 824, 826 includes twoprocessing volumes processing volumes 822 a, 822 b, 824 a, 824 b, 826 a,826 b respectively positioned side by side. Each of the twin volumeprocessing chambers 822, 824, 826 is configured to process twosubstrates simultaneously. The substrate transfer robot 808 includes tworobot blades 808 a, 808 b arranged side-by-side for transfer twosubstrates among the twin volume processing chambers 822, 824, 826 andthe load-lock chamber 816. This twin volume configuration increasesproductivity without increasing resources, such as substrate transferrobot, and gas panels for each processing chamber.

In one embodiment, the twin volume processing chambers 822, 824, 826 mayhave different configurations to perform different processing steps in aprocessing recipe. Alternatively, the twin volume processing chambers822, 824, 826 may have the same configuration to perform the sametreatments to the substrates.

In one embodiment, at least one of the twin volume processing chambers822, 824, 826 is substantially similar to the twin volume processingchamber 600 and configured to process two substrates simultaneously intwo processing volumes by performing UV treatment and chemical treatmentto the substrates, consecutively, alternatively or simultaneously.

FIG. 9 is a diagram showing a method 900 for processing a substrateaccording to one embodiment of the present invention. The method 900 maybe performed in a standalone processing chamber, such as the processingchamber 100 of FIG. 1, the twin volume process chamber 600 of FIG. 6, orin a processing chamber coupled to a processing system, such as theprocessing system 800 of FIG. 8 or a processing system including asingle volume processing chamber 100 of FIG. 1.

The method 900 is configured to recover low k dielectric material usingUV treatment and chemical treatment within the same processing chamber.

For example, the method 900 may be used to perform a one stop recoveryfor a low k dielectric film based on SiCOH material formed by aplasma-enhanced chemical vapor deposition. Particularly, vapor phasesilylation and cure are combined to recover the low k film propertiesand repair side wall damage. In vapor phase silylation, methyl or phenylcontaining silylation compounds react with the Si—OH groups in low kfilms to convert hydrophilic Si—OH groups into hydrophobic Si—O—Si(CH₃)₃groups against moisture uptake, thus decreasing dielectric constant. InUV cure, pores in the low k film are sealed by curing.

In box 910 of method 900, a substrate is received on a substrate supportdisposed in a processing volume of a processing chamber. In oneembodiment, the processing volume is disposed under a UV transparent gasdistribution showerhead that is substantially transparent to lightswithin UV wavelength. The UV transparent gas distribution showerheadallows processing gas for chemical treatment to be distributed acrossthe substrate in a substantially even manner. The UV transparent gasdistribution showerhead also allows passages of UV light to enable UVcuring of the substrate in the processing volume.

In box 920 of method 900, a chemical treatment is performed by flowingone or more processing gas from the UV transparent gas distributionshowerhead above the substrate. In one embodiment, the one or moreprocessing gas is delivered towards the substrate through the UVtransparent gas distribution showerhead from a region between a UVtransparent window and the UV transparent gas distribution showerhead.

In one embodiment, the chemical treatment is vapor silylation using asilylation agent selected from a group comprising hexamethyldisilazane(HMDS), tetramethyldisilazane (TMDS), trimethylchlorosilane (TMCS),dimethyldichlorosilane (DMDCS), methyltrichlorosilane (MTCS),methyltrichlorosilane (MTCS), trimethylmethoxysilane (TMMS),phenyltrimethoxysilane (PTMOS), phenyldimethylchlorsilane (PDMCS),dimethylaminotrimethylsilane (DMATMS), bis(dimethylam ino)dimethylsilane(BDMADMS), or combinations thereof. In one embodiment, the time duringfor the vapor silylation may be from about 1 min to about 10 min. Thesilylation temperature may be from about 100 C to about 400 C. The flowrate of the silylation agent may be between about 0.5 g to about 5 g/minand the chamber pressure may be between about 2 m Torr and about 500Torr.

In box 930 of the method 900, the substrate is cured in the sameprocessing chamber using UV energy from a UV unit disposed above the UVtransparent gas distribution showerhead and the UV transparent window.In one embodiment, the UV cure temperature may be from room temperatureto about 400 C. The UV cure time may be from about 10 sec to about 180sec. A UV cure gas may be flown to the processing chamber through the UVtransparent gas distribution showerhead. In one embodiment, an inertcure gas, such as He and Ar, may be flown to the processing chamber at aflow rate between about 8 slm to about 24 slm.

In another embodiment, the silylation in box 920 and UV curing in box930 can be performed simultaneously. The UV unit turns on/off at thesame time with the silylation process. The silylation agent flow rate,UV power, wafer temperature, chamber pressure of silylation and UV cureprocess, silylation time and UV on time are adjustable.

In another embodiment, the UV cure in box 930 may be performed beforesilylation treatment in box 920.

In another embodiment, the UV cure in box 930 and the silylation in box920 can be performed alternately. First, the UV cure is performed toremove some water from surface/side wall. The silylation is performed torecover surface hydrophobicity. The UV cure is then performed to furtherrecover low k film damage. The silylation agent flow rate, UV power,wafer temperature, chamber pressure of silylation and UV cure process,silylation time and UV on time are adjustable.

In yet another embodiment, the silylation in box 920 and the UV cure inbox 930 are performed in a pulsed in-situ manner. The silylationtreatment is performed in a pulse of about 5-10 seconds followed by apulse of UV cure for about 5-10 seconds.

Embodiments of the present invention provide apparatus and methods forperforming chemical treatment and UV curing for low-k film recovery in asingle chamber. Embodiments of the present invention also enable plasmacleaning of the UV curing chamber by including a remote plasma source.As a result, costs of production are reduced by reducing the number ofchambers used. Efficiency of the product is increased by eliminatingsubstrate transfer and additional chamber pump outs. Additionally,embodiments of the present invention also enables incorporating varioustreatment features and functions within a minimum space, thereby,enabling cost-effective implementation of k-recovery in a manufacturingenvironment.

While the foregoing is directed to embodiments of the present invention,other and further embodiments of the invention may be devised withoutdeparting from the basic scope thereof, and the scope thereof isdetermined by the claims that follow.

What is claimed is:
 1. A method for processing a substrate, comprising:receiving a substrate on a substrate support disposed in an inner volumeof a processing chamber, wherein the processing chamber comprises: a gasdistribution showerhead formed of a UV transparent material disposedabove the substrate support, wherein the gas distribution showerheadcomprises a plurality of holes for supplying gas to the inner volume; aUV transparent window disposed above the gas distribution showerhead,wherein a gas volume is formed between the gas distribution showerheadand the UV transparent window, and the gas volume and the inner volumeare in fluid communication through the gas distribution showerhead; a UVlamp disposed outside the inner volume, wherein the UV lamp isconfigured to direct UV light towards the substrate support through theUV transparent window and the gas distribution showerhead; an upperclamp disposed in an upper opening of a chamber body, wherein the upperclamp is disposed between the gas distribution showerhead and the UVtransparent window, and a gas flow path is formed within the upperclamp; and a lower clamp, wherein the gas distribution showerhead isclamped between the upper clamp and the lower clamp, an inlet plenum isformed between the upper clamp and the lower clamping member, and anexhaust plenum surrounds the gas distribution showerhead; chemicallytreating the substrate by flowing one or more processing gases throughthe gas distribution showerhead from the gas volume defined between theUV transparent window and the gas distribution showerhead; and curingthe substrate by directing UV energy towards the substrate from the UVlamp through the gas distribution showerhead and the UV transparentwindow.
 2. The method of claim 1, wherein chemically treating thesubstrate lowers a dielectric constant of a film formed on thesubstrate.
 3. The method of claim 1, wherein chemically treating thesubstrate comprises flowing one or more processing gases comprising asilylation agent for chemically treating a low k film formed on thesubstrate.
 4. The method of claim 3, wherein the chemical treating andthe curing are performed simultaneously.
 5. The method of claim 3,wherein the chemical treating is performed before the curing.
 6. Themethod of claim 3, wherein the curing is performed before the chemicaltreating.
 7. The method of claim 3, wherein the chemical treating andcuring are performed in a pulsed manner, wherein a pulse of chemicaltreating is followed by a pulse of curing.
 8. The method of claim 3,wherein a UV cure gas is provided to the process chamber during thecuring of the substrate.
 9. The method of claim 1, wherein the chemicaltreating and the curing are performed when the substrate is on thesubstrate support.
 10. A method for processing a substrate, comprising:positioning a substrate on a substrate support disposed in an innervolume of a processing chamber; chemically treating the substrate on thesubstrate support to lower a dielectric constant of a film formed on thesubstrate by flowing one or more processing gases into an inner volumeof the processing chamber by introducing the one or more processinggases into a gas volume defined between a gas distribution showerheadformed of a UV transparent material and a UV transparent window, whereinthe one or more processing gases are introduced to the gas volumethrough a gas flow path formed within an upper clamp, wherein the one ormore processing gases flow from the gas volume to the inner volumethrough a plurality of holes of the gas distribution showerhead, andwherein the gas distribution showerhead is clamped between the upperclamp and a lower clamp, an inlet plenum is formed between the upperclamp and the lower clamp, and an exhaust plenum surrounds the gasdistribution showerhead; and curing the substrate on the substratesupport by directing UV energy towards the substrate through the UVtransparent window and the gas distribution showerhead from a UV lampdisposed outside the inner volume.
 11. The method of claim 10, whereinchemically treating the substrate comprises flowing one or moreprocessing gases comprising a silylation agent for chemically treating alow k film formed on the substrate.
 12. The method of claim 10, whereinthe chemical treating and the curing are performed simultaneously. 13.The method of claim 10, wherein the curing is performed before thechemical treating.
 14. The method of claim 10, wherein the chemicaltreating and curing are performed in a pulsed manner, wherein a pulse ofchemical treating is followed by a pulse of curing.
 15. The method ofclaim 10, wherein a UV cure gas is provided to the process chamberduring the curing of the substrate.
 16. A method for processing asubstrate, comprising: receiving a substrate on a substrate supportdisposed in an inner volume of a processing chamber; depositing a filmon the substrate in the processing chamber; chemically treating thesubstrate in the processing chamber to lower a dielectric constant ofthe film deposited on the substrate by flowing one or more processinggases into an inner volume of the processing chamber by introducing theone or more processing gases into a gas volume defined between a gasdistribution showerhead formed of a UV transparent material and a UVtransparent window, wherein the one or more processing gases areintroduced to the gas volume through a gas flow path formed within anupper clamp, wherein the one or more processing gases flow from the gasvolume to the inner volume through a plurality of holes of the gasdistribution showerhead, and wherein the gas distribution showerhead isclamped between the upper clamp and a lower clamp, an inlet plenum isformed between the upper clamp and the lower clamp, and an exhaustplenum surrounds the gas distribution showerhead; and curing thesubstrate in the processing chamber by directing UV energy towards thesubstrate through the UV transparent window and the gas distributionshowerhead from a UV lamp disposed outside the inner volume.
 17. Themethod of claim 16, wherein chemically treating the substrate comprisesflowing one or more processing gases comprising a silylation agent forchemically treating a low k film formed on the substrate.
 18. The methodof claim 16, wherein the chemical treating and the curing are performedsimultaneously.
 19. The method of claim 16, wherein the substrate is onthe substrate support during the depositing, chemically treating, andcuring.
 20. The method of claim 16, wherein the chemical treating andcuring are performed in a pulsed manner, wherein a pulse of chemicaltreating is followed by a pulse of curing.